Reflection-type x-ray exposure mask

Abstract

PURPOSE: To prevent exponential distribution of intensity of reflected X-ray generated in an edge part of a mask pattern and to enable accurate and clear transcription of the mask pattern in a reflection type X-ray exposure mask. CONSTITUTION: In a reflection type X-ray mask wherein a desired mask pattern is formed which consists of a multilayer film 1 which reflects X-ray on a substrate 2 composed of a substance which does not reflect X-ray, at least a part of an edge face of a periphery of a pattern of the multilayer film 1 forms a slant along a projection angle direction in a reflection surface of X-ray in the mask. COPYRIGHT: (C)1992,JPO&Japio

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Cited By (5)

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    JP-2010141338-AJune 24, 2010Samsung Electronics Co Ltd, 三星電子株式会社Samsung Electronics Co.,Ltd.フォトマスク、フォトマスクの製造方法、及びプラズマエッチングチャンバシステム
    JP-2014075484-AApril 24, 2014Toppan Printing Co Ltd, 凸版印刷株式会社反射型フォトマスク
    JP-2015056451-AMarch 23, 2015株式会社東芝, Toshiba CorpExposure method, exposure device and reflection type projection exposure mask
    JP-2015529855-AOctober 08, 2015ケーエルエー−テンカー コーポレイション, ケーエルエー−テンカー コーポレイションEuvマスク検査システムの光学系の波面収差計測
    US-5555929-ASeptember 17, 1996Nippondenso Co., LtdHeat exchanger