Semiconductor integrated circuit device and manufacture thereof

Abstract

PURPOSE: To reduce the contact resistance between wining and a semiconductor substrate and to reduce the alignment margin of a connecting hole which is used to connect the wining to the semiconductor substrate. CONSTITUTION: An n-semiconductor region 5b on one side of an n-channel type MISFET (Qn) is connected to an Al laminated interconnection 13 through a low-resistance n + semiconductor region 15a formed in one part of it; a p- semiconductor region 6b of one side of a p-channel type MISFET (Qp) is connected to the Al laminated interconnection 13 through a low-resistance p + semiconductor region 15b formed in one part of it. COPYRIGHT: (C)1992,JPO&Japio

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    JP-H06224149-AAugust 12, 1994Gold Star Electron Co Ltd, ゴールド スター エレクトロン カンパニー リミテッドFormation of contact hole for metallic wiring in semiconductor device